As overlay margin is getting tighter, traditional overlay correction method is not enough to secure more overlay margin without extended correction potential on lithography tool. Timely, the lithography tool has a capability of wafer to wafer correction. From these well-timed industry’s preparations, the uncorrected overlay error from current sampling in a lot could be corrected for yield enhancement.

In this paper, overlay budget break was performed prior to experiments with the purpose of estimating amount of overlay improvement. And wafer to wafer correction was simulated to the specified layer of a 2x node DRAM device. As a result, not only maximum 94.4% of residual variation improvement is estimated, but also recognized that more samplings to cover all wafer’s behavior is inevitable. Integrated metrology with optimized sampling scheme was also introduced as a supportive method for more samplings.

Date Published: 15 March 2016
PDF: 6 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 978009 (15 March 2016); doi: 10.1117/12.2219922

Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)