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Proceedings Paper

Additive chemistry and distributions in NTD photoresist thin films
Author(s): James Thackeray; Chang-Young Hong; Michael B. Clark Jr.
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Paper Abstract

The lithographic performance of photoresists is a function of the vertical distribution of formulation components, such as photoacid generator (PAG) molecules, in photoresist thin films and how these components undergo chemical modification and migrate within the film during the lithography processing steps. This paper will discuss how GCIB-SIMS depth profiles were used to monitor the PAG and quencher base distributions before and after exposure and post-exposure bake processing steps for different PAG/photoresist formulations. The authors show that the use of surface active quencher in an NTD photoresist leads to better resist profiles, superior DOF and better OPC performance.

Paper Details

Date Published: 25 March 2016
PDF: 10 pages
Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97791B (25 March 2016); doi: 10.1117/12.2219743
Show Author Affiliations
James Thackeray, Dow Electronic Materials (United States)
Chang-Young Hong, Dow Electronic Materials (Korea, Republic of)
Michael B. Clark Jr., The Dow Chemical Co. (United States)

Published in SPIE Proceedings Vol. 9779:
Advances in Patterning Materials and Processes XXXIII
Christoph K. Hohle; Rick Uchida, Editor(s)

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