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Proceedings Paper

A bottom-up pattern collapse mitigation strategy for EUV lithography
Author(s): Tero S. Kulmala; Michaela Vockenhuber; Yasin Ekinci
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Paper Abstract

As the lithographic resolution in semiconductor device manufacturing increases photoresist thickness cannot keep the same pace because of limitations set by pattern transfer. This leads to an increase in aspect ratios of patterned resist structures which in turn gives rise to pattern collapse that prevents the use of the patterned features for pattern transfer. Pattern collapse is caused by the capillary forces present on the resist surface during drying of the wafer. Therefore the best approach for mitigating pattern collapse is the complete removal of any drying steps from the processing of wafers after the lithography has been carried out. Several techniques achieving this have been presented. In this paper we propose a bottom-up strategy for pattern collapse mitigation where the wafers are brought from rinsing to further processing steps while they are still wet, thus avoiding the drying-induced pattern collapse without introducing additional processing steps.

Paper Details

Date Published: 18 March 2016
PDF: 7 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762N (18 March 2016); doi: 10.1117/12.2219735
Show Author Affiliations
Tero S. Kulmala, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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