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Proceedings Paper

Spacer multi-patterning control strategy with optical CD metrology on device structures
Author(s): Jongsu Lee; Byoung-Hoon Lee; Won-Kwang Ma; Sang-Jun Han; Young-Sik Kim; Noh-Jung Kwak; Thomas Theeuwes; Wei Guo; Yi Song; Baukje Wisse; Stefan Kruijswijk; Hugo Cramer; Steven Welch; Alok Verma; Rui Zhang; Yvon Chai; Sharon Hsu; Giacomo Miceli; Kyu-Tae Sun; Jin-Moo Byun
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Paper Abstract

Spacer multi patterning process continues to be a key enabler of future design shrinks in DRAM and NAND process flows. Improving Critical Dimension Uniformity (CDU) for main features remains high priority for multi patterning technology and requires improved metrology and control solutions.

In this paper Spacer Patterning Technology is evaluated using an angle resolved scatterometry tool for both intra field control of the core CD after partition etch (S1) and interfield pitch-walking control after final etch (S1-S2). The intrafield measurements were done directly on device using dense sampling. The inter-field corrections were based on sparse full wafer measurements on biased OCD targets. The CDU improvement after partition-etch was verified by direct scatterometer and CD-SEM measurement on device. The final etch performance across wafer was verified with scatterometer on OCD target.

The scatterometer metrology in combination with the control strategy demonstrated a consistent CDU improvement of core (S1) intrafield CD after partition etch between 23-39% and 47-53% on interfield pitch-walking (S1-S2) after final etch. To confirm these improvements with CD-SEM, oversampling of more than 16 times is needed compared to scatterometer.

Based on the results it is concluded that scatterometry in combination with the evaluated metrology and control strategy in principle qualifies for a spacer process CDU control loop in a manufacturing environment.

Paper Details

Date Published: 8 March 2016
PDF: 11 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782B (8 March 2016); doi: 10.1117/12.2219664
Show Author Affiliations
Jongsu Lee, SK Hynix, Inc. (Korea, Republic of)
Byoung-Hoon Lee, SK Hynix, Inc. (Korea, Republic of)
Won-Kwang Ma, SK Hynix, Inc. (Korea, Republic of)
Sang-Jun Han, SK Hynix, Inc. (Korea, Republic of)
Young-Sik Kim, SK Hynix, Inc. (Korea, Republic of)
Noh-Jung Kwak, SK Hynix, Inc. (Korea, Republic of)
Thomas Theeuwes, ASML Netherlands B.V. (Netherlands)
Wei Guo, ASML Netherlands B.V. (Netherlands)
Yi Song, ASML Netherlands B.V. (Netherlands)
Baukje Wisse, ASML Netherlands B.V. (Netherlands)
Stefan Kruijswijk, ASML Netherlands B.V. (Netherlands)
Hugo Cramer, ASML Netherlands B.V. (Netherlands)
Steven Welch, ASML Netherlands B.V. (Netherlands)
Alok Verma, ASML Netherlands B.V. (Netherlands)
Rui Zhang, ASML Netherlands B.V. (Netherlands)
Yvon Chai, ASML Netherlands B.V. (Netherlands)
Sharon Hsu, ASML Netherlands B.V. (Netherlands)
Giacomo Miceli, ASML Netherlands B.V. (Netherlands)
Kyu-Tae Sun, ASML Korea Co., Ltd. (Korea, Republic of)
Jin-Moo Byun, ASML Korea Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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