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Proceedings Paper

Current development status of HSFET (High NA Small Field Exposure Tool) in EIDEC
Author(s): Satoshi Tanaka; Shunko Magoshi; Hidemi Kawai; Soichi Inoue; Wylie Rosenthal; Luc Girard; Lou Marchetti; Bob Kestner; John Kincade
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Paper Abstract

In EIDEC, a micro extreme UV (EUV) exposure tool for next-generation lithography has been developed, referred to as a High NA Small Field Exposure Tool (HSFET), and its basic configuration is as follows: Xe DPP source, critical illumination configuration, a rotationally moving turret with several sigma apertures, a larger than 30 × 200 μm field size, and variable NA mechanics to cover from 0.3 to 0.5 NA and beyond. The PO optical performance is well suited to our required 11 nm half-pitch patterning. The transmitted optical wavefront error (WFE) was measured and confirmed to be 0.29 nm RMS, which is far less than the required value of 0.6 nm RMS, and the tool was successfully installed in August 2015. Here we show the exposure results using a newly designed reticle for HSFET patterning. We report the basic printing performance and consideration for high-NA effects as know n polarization effects.

Paper Details

Date Published: 18 March 2016
PDF: 15 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761N (18 March 2016); doi: 10.1117/12.2219368
Show Author Affiliations
Satoshi Tanaka, EUVL Infrastructure Development Ctr., Inc. (Japan)
Shunko Magoshi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidemi Kawai, EUVL Infrastructure Development Ctr., Inc. (Japan)
Soichi Inoue, EUVL Infrastructure Development Ctr., Inc. (Japan)
Wylie Rosenthal, Zygo Corp. (United States)
Luc Girard, Zygo Corp. (United States)
Lou Marchetti, Zygo Corp. (United States)
Bob Kestner, Zygo Corp. (United States)
John Kincade, Zygo Corp. (United States)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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