In EIDEC, a micro extreme UV (EUV) exposure tool for next-generation lithography has been developed, referred to as a High NA Small Field Exposure Tool (HSFET), and its basic configuration is as follows: Xe DPP source, critical illumination configuration, a rotationally moving turret with several sigma apertures, a larger than 30 × 200 μm field size, and variable NA mechanics to cover from 0.3 to 0.5 NA and beyond. The PO optical performance is well suited to our required 11 nm half-pitch patterning. The transmitted optical wavefront error (WFE) was measured and confirmed to be 0.29 nm RMS, which is far less than the required value of 0.6 nm RMS, and the tool was successfully installed in August 2015. Here we show the exposure results using a newly designed reticle for HSFET patterning. We report the basic printing performance and consideration for high-NA effects as know n polarization effects.

Date Published: 18 March 2016
PDF: 15 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761N (18 March 2016); doi: 10.1117/12.2219368

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)