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Proceedings Paper

Applications of on-product diffraction-based focus metrology in logic high volume manufacturing
Author(s): Ben F. Noyes III; Babak Mokaberi; David Bolton; Chen Li; Ashwin Palande; Kevin Park; Marc Noot; Marc Kea
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Paper Abstract

The integration of on-product diffraction-based focus (DBF) capability into the majority of immersion lithography layers in leading edge logic manufacturing has enabled new applications targeted towards improving cycle time and yield. A CD-based detection method is the process of record (POR) for excursion detection. The drawback of this method is increased cycle time and limited sampling due to CD-SEM metrology capacity constraints. The DBFbased method allows the addition of focus metrology samples to the existing overlay measurements on the integrated metrology (IM) system. The result enables the addition of measured focus to the SPC system, allowing a faster excursion detection method.

For focus targeting, the current method involves using a dedicated focus-exposure matrix (FEM) on all scanners, resulting in lengthy analysis times and uncertainty in the best focus. The DBF method allows the measurement to occur on the IM system, on a regular production wafer, and at the same time as the exposure. This results in a cycle time gain as well as a less subjective determination of best focus. A third application aims to use the novel onproduct focus metrology data in order to apply per-exposure focus corrections to the scanner. These corrections are particularly effective at the edge of the wafer, where systematic layer-dependent effects can be removed using DBFbased scanner feedback.

This paper will discuss the development of a methodology to accomplish each of these applications in a high-volume production environment. The new focus metrology method, sampling schemes, feedback mechanisms and analysis methods lead to improved focus control, as well as earlier detection of failures.

Paper Details

Date Published: 8 March 2016
PDF: 7 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782V (8 March 2016); doi: 10.1117/12.2219303
Show Author Affiliations
Ben F. Noyes III, SAMSUNG Austin Semiconductor (United States)
Babak Mokaberi, SAMSUNG Austin Semiconductor (United States)
David Bolton, SAMSUNG Austin Semiconductor (United States)
Chen Li, SAMSUNG Austin Semiconductor (United States)
Ashwin Palande, ASML Netherlands B.V. (Netherlands)
Kevin Park, ASML Netherlands B.V. (Netherlands)
Marc Noot, ASML Netherlands B.V. (Netherlands)
Marc Kea, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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