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Proceedings Paper

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography
Author(s): Andreas Frommhold; Alexandra McClelland; John Roth; Roberto A. Fallica; Yasin Ekinci; Alex P. G. Robinson
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Paper Abstract

We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

Paper Details

Date Published: 18 March 2016
PDF: 9 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977614 (18 March 2016); doi: 10.1117/12.2219221
Show Author Affiliations
Andreas Frommhold, The Univ. of Birmingham (United Kingdom)
Alexandra McClelland, Irresistible Materials Ltd. (United Kingdom)
John Roth, Nano-C, Inc. (United States)
Roberto A. Fallica, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)
Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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