Share Email Print

Proceedings Paper

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design
Author(s): Aurélien Fay; Clyde Browning; Pieter Brandt; Jacky Chartoire; Sébastien Bérard-Bergery; Jérôme Hazart; Alexandre Chagoya; Sergei Postnikov; Mohamed Saib; Ludovic Lattard; Patrick Schavione
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography’s machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.

Paper Details

Date Published: 22 March 2016
PDF: 15 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977714 (22 March 2016); doi: 10.1117/12.2219178
Show Author Affiliations
Aurélien Fay, CEA-LETI (France)
Clyde Browning, ASELTA Nanographics (France)
Pieter Brandt, MAPPER Lithography (Netherlands)
Jacky Chartoire, CEA-LETI (France)
Sébastien Bérard-Bergery, CEA-LETI (France)
Jérôme Hazart, CEA-LETI (France)
Alexandre Chagoya, ASELTA Nanographics (France)
Sergei Postnikov, ASELTA Nanographics (France)
Mohamed Saib, ASELTA Nanographics (France)
Ludovic Lattard, CEA-LETI (France)
Patrick Schavione, ASELTA Nanographics (France)

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?