For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of SAQP patterning with LiNe chemoepitaxy on a 14nm DRAM process. To quantify the impact of this module replacement, we investigate a key process yield metric for DRAM: interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally-packed capacitors patterned with an array of diblock copolymer cylinders in place of LE4 patterning.

Date Published: 22 March 2016
PDF: 15 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977710 (22 March 2016); doi: 10.1117/12.2218935

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)