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Proceedings Paper

Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM
Author(s): Mattan Kamon; Mustafa Akbulut; Yiguang Yan; Daniel Faken; Andras Pap; Vasanth Allampalli; Ken Greiner; David Fried
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Paper Abstract

For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of SAQP patterning with LiNe chemoepitaxy on a 14nm DRAM process. To quantify the impact of this module replacement, we investigate a key process yield metric for DRAM: interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally-packed capacitors patterned with an array of diblock copolymer cylinders in place of LE4 patterning.

Paper Details

Date Published: 22 March 2016
PDF: 15 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977710 (22 March 2016); doi: 10.1117/12.2218935
Show Author Affiliations
Mattan Kamon, Coventor, Inc. (United States)
Mustafa Akbulut, Coventor, Inc. (United States)
Yiguang Yan, Coventor, Inc. (United States)
Daniel Faken, Coventor, Inc. (United States)
Andras Pap, Coventor, Inc. (United States)
Vasanth Allampalli, Coventor, Inc. (United States)
Ken Greiner, Coventor, Inc. (United States)
David Fried, Coventor, Inc. (United States)

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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