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Proceedings Paper

Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography)
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Paper Abstract

Understanding of stochastic phenomena is essential to the development of highly sensitive resist for nanofabrication. In this study, we investigated the stochastic effects in a chemically amplified resist consisting of poly(4-hydroxystyrene-co-t-butyl methacrylate), triphenylsulfonium nonafluorobutanesulfonate (an acid generator), and tri-n-octylamine (a quencher). The SEM images of resist patterns were analyzed, using Monte Carlo simulation on the basis of the sensitization and reaction mechanisms of chemically amplified extreme ultraviolet resists. It was estimated that ±0.82σ fluctuation of the number of protected units per polymer molecule led to line edge roughness formation. Here, σ is the standard deviation of the number of protected units per polymer molecule after postexposure baking.

Paper Details

Date Published: 25 March 2016
PDF: 6 pages
Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97790E (25 March 2016); doi: 10.1117/12.2218839
Show Author Affiliations
Takahiro Kozawa, Osaka Univ. (Japan)
Julius Joseph Santillan, EUVL Infrastructure Development Ctr., Inc. (Japan)
Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 9779:
Advances in Patterning Materials and Processes XXXIII
Christoph K. Hohle; Rick Uchida, Editor(s)

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