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Proceedings Paper

Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production
Author(s): Keisuke Yagawa; Kunihiro Ugajin; Machiko Suenaga; Shingo Kanamitsu; Takeharu Motokawa; Kazuki Hagihara; Yukiyasu Arisawa; Sachiko Kobayashi; Masato Saito; Masamitsu Ito
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Paper Abstract

Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from master templates. On the other hand, master templates are currently fabricated by electron-beam (EB) lithography[1]. In near future, finer patterns less than 15nm will be required on master template and EB data volume increases exponentially. So, we confront with a difficult challenge. A higher resolution EB mask writer and a high performance fabrication process will be required. In our previous study, we investigated a potential of photomask fabrication process for finer patterning and achieved 15.5nm line and space (L/S) pattern on template by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist. In contrast, we found that a contrast loss by backscattering decreases the performance of finer patterning. For semiconductor devices manufacturing, we must fabricate complicated patterns which includes high and low density simultaneously except for consecutive L/S pattern. Then it’s quite important to develop a technique to make various size or coverage patterns all at once. In this study, a small feature pattern was experimentally formed on master template with dose modulation technique. This technique makes it possible to apply the appropriate exposure dose for each pattern size. As a result, we succeed to improve the performance of finer patterning in bright field area. These results show that the performance of current EB lithography process have a potential to fabricate NIL template.

Paper Details

Date Published: 1 April 2016
PDF: 9 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771I (1 April 2016); doi: 10.1117/12.2218809
Show Author Affiliations
Keisuke Yagawa, Toshiba Corp. (Japan)
Kunihiro Ugajin, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Shingo Kanamitsu, Toshiba Corp. (Japan)
Takeharu Motokawa, Toshiba Corp. (Japan)
Kazuki Hagihara, Toshiba Corp. (Japan)
Yukiyasu Arisawa, Toshiba Corp. (Japan)
Sachiko Kobayashi, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Masamitsu Ito, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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