Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3–7 periods of the lamella spacing of the block copolymer, L_o. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 L_o and 4 L_o in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.

Date Published: 1 April 2016
PDF: 6 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771S (1 April 2016); doi: 10.1117/12.2218758

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)