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Proceedings Paper

High-speed resonant detection via defect states in silicon disk resonators
Author(s): Andrew P. Knights; Jason J. Ackert
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Paper Abstract

This submission presents results on the frequency response of silicon resonant detectors, suitable for operation at wavelengths around 1550nm. The resonant structures are made sensitive to sub-bandgap light via the introduction of lattice defect states. An instability in operation is associated with the generation of free carriers within the resonant structure, producing a transient shift in the resonance wavelength. This manifests as a bit-pattern dependence for the detector, limiting the bandwidth of operation.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9752, Silicon Photonics XI, 97520P (14 March 2016); doi: 10.1117/12.2218173
Show Author Affiliations
Andrew P. Knights, McMaster Univ. (Canada)
Jason J. Ackert, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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