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Proceedings Paper

Proposed approach to drive wafer topography for advanced lithography
Author(s): John F. Valley; Andrey Melnikov; John A. Pitney
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Paper Abstract

One requirement for advanced lithography remains suitable incoming wafer topography. We propose that local wafer flatness be visualized and quantified using the techniques developed for wafer front-surface nanotopography. This is a significant change in that existing wafer topography metrology tools do not enable our proposed approach.

Paper Details

Date Published: 9 March 2016
PDF: 12 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97783X (9 March 2016); doi: 10.1117/12.2214627
Show Author Affiliations
John F. Valley, SunEdison Semiconductor Ltd. (United States)
Andrey Melnikov, SunEdison Semiconductor Ltd. (United States)
John A. Pitney, SunEdison Semiconductor Ltd. (United States)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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