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Proceedings Paper

Correlation between space charge created by Fowler-Nordheim electron injections and charge to breakdown (QBD) of gate oxides in MOS capacitors: modeling and experiment
Author(s): J. Oualid; E. Ciantar; J. M. Moragues; Bruno Sagnes; Philippe Boivin; G. Blaise
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Paper Abstract

The experiments confirm that the charge to breakdown QBD, often used for oxide monitoring, is closely related to the positive space charge formed in the bulk of the oxide layer during electron injections. The results are justified by assuming that breakdown occurs when a critical net and effective number of charges per unit area, NC equals 5 1012 cm-2, is reached in SiO2 layers. An interpretation of breakdown induced by a positive charge is proposed, based on the polarization/relaxation process previously used to explain the electron charge induced breakdown process.

Paper Details

Date Published: 22 September 1995
PDF: 12 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221437
Show Author Affiliations
J. Oualid, Domaine Univ. de Saint-Jerome (France)
E. Ciantar, Domaine Univ. de Saint-Jerome (France)
J. M. Moragues, Domaine Univ. de Saint-Jerome (France)
Bruno Sagnes, Domaine Univ. de Saint-Jerome (France)
Philippe Boivin, SGS-Thomson Microelectronics, Inc. (United States)
G. Blaise, Univ. de Paris-Sud (France)

Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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