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Proceedings Paper

Comparison of simulated and experimental CD-limited yield for a submicron i-line process
Author(s): Edward W. Charrier; Christopher J. Progler; Chris A. Mack
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Paper Abstract

A method is presented for predicting the CD distribution and CD-limited yield of a photolithographic process using well established lithography modeling tools. The lithography simulator PROLITH/2 is used to generate a multi-variable process response space of final resist critical dimension (CD) versus focus, exposure, maximum resist development rate, and resist thickness. Sources of error are characterized for an actual 0.6 micron i-line process. By correlating the input error distribution with the process response space, a final simulated CD distribution is generated. This simulated CD distribution is compared with the actual CD distribution of the process. By implementing CD specifications, values of CD-limited yield metrics are calculated for the actual process and the simulated data.

Paper Details

Date Published: 22 September 1995
PDF: 11 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221434
Show Author Affiliations
Edward W. Charrier, FINLE Technologies, Inc. (United States)
Christopher J. Progler, SGS-Thomson Mircoelectronics, Inc. (United States)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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