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Proceedings Paper

Escape probability for negative electron affinity photocathodes: calculations compared to experiments
Author(s): German Vergara; Alberto Herrera-Gomez; William E. Spicer
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Paper Abstract

A Monte Carlo technique has been used to calculate the electron energy distributions and the escape probabilities (EP) for the negative electron affinity (NEA) GaAs transmission photocathode. The results are compared with experimental data. A simple model, which assumes electrons from the (Gamma) minimum and that ideal conditions exist at the semiconductor-vacuum interface, does not work properly. Different types of scattering in the activation layer and a nonideal interface are considered as possible causes for the discrepancies between calculations and experiments. The results show that a non-ideal interface could be the best candidate for explaining the behavior of the electron angular distribution.

Paper Details

Date Published: 26 September 1995
PDF: 15 pages
Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); doi: 10.1117/12.221422
Show Author Affiliations
German Vergara, Stanford Univ. (United States)
Alberto Herrera-Gomez, Stanford Univ. (United States)
William E. Spicer, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 2550:
Photodetectors and Power Meters II
Kathleen Muray; Kenneth J. Kaufmann, Editor(s)

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