The etching gases usually applied for plasma supported gas phase cleaning of PECVD facilities, i.e. CF₄ SF₆ and NF₃, were checked for their efficiency with regard to silicon containing layers. Even less known etching gases such as ClF₃ or pure fluorine were tested. NF₃ has the highest etching rate. The etching rates of F₂ and ClF₃ are only slightly worse. For the first time, etching gas mixtures of CBrF₃/F₂ and NF₃/F₂ were studied. The exhaust gases produced were subjected to online FTIR spectroscopy and evaluated according to their hazards and operator exposure limits. Possible partial recycling of the exhaust gases is discussed.

Date Published: 19 September 1995
PDF: 9 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221310

Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)