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Proceedings Paper

Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
Author(s): John Rönn; Lasse Karvonen; Alexander Pyymäki-Perros; Nasser Peyghambarian; Harri Lipsanen; Antti Säynätjoki; Zhipei Sun
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Paper Abstract

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

Paper Details

Date Published: 1 March 2016
PDF: 8 pages
Proc. SPIE 9750, Integrated Optics: Devices, Materials, and Technologies XX, 97500P (1 March 2016); doi: 10.1117/12.2212990
Show Author Affiliations
John Rönn, Aalto Univ. (Finland)
Lasse Karvonen, Aalto Univ. (Finland)
Alexander Pyymäki-Perros, Aalto Univ. (Finland)
Nasser Peyghambarian, Aalto Univ. (Finland)
Univ. of Eastern Finland (Finland)
College of Optical Sciences, The Univ. of Arizona (United States)
Harri Lipsanen, Aalto Univ. (Finland)
Antti Säynätjoki, Aalto Univ. (Finland)
Univ. of Eastern Finland (Finland)
Zhipei Sun, Aalto Univ. (Finland)

Published in SPIE Proceedings Vol. 9750:
Integrated Optics: Devices, Materials, and Technologies XX
Jean-Emmanuel Broquin; Gualtiero Nunzi Conti, Editor(s)

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