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Proceedings Paper

Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions
Author(s): Mark C. A. York; Francine Proulx; Denis P. Masson; Abdelatif Jaouad; Boussairi Bouzazi; Richard Arès; Vincent Aimez; Simon Fafard
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Paper Abstract

PV devices with active areas of ~3:4 mm2 were fabricated and tested with top electrodes having different emitter gridline spacings with active area shadowing values between 0% and 1.8%. As expected, the thicker n/p junctions exhibit hindered photocarrier extraction, with low fill factor (FF) values, for devices prepared with sparse gridline designs. However, this study clearly demonstrates that for thin n/p junctions photocarrier extraction can still be efficient (FF > 80%) even for devices with no gridlines, which we explain using a TCAD model. The electric field profiles of devices with and without hindered photocarrier extraction are also discussed.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 97430Y (14 March 2016); doi: 10.1117/12.2212960
Show Author Affiliations
Mark C. A. York, Univ. de Sherbrooke (Canada)
Francine Proulx, Univ. de Sherbrooke (Canada)
Azastra Opto Inc. (Canada)
Denis P. Masson, Azastra Opto Inc. (Canada)
Abdelatif Jaouad, Univ. de Sherbrooke (Canada)
Boussairi Bouzazi, Univ. de Sherbrooke (Canada)
Richard Arès, Univ. de Sherbrooke (Canada)
Vincent Aimez, Univ. de Sherbrooke (Canada)
Simon Fafard, Univ. de Sherbrooke (Canada)
Azastra Opto Inc. (Canada)

Published in SPIE Proceedings Vol. 9743:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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