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Proceedings Paper

Etching technology and applications for through-the-wafer silicon etching
Author(s): David R. Craven; Keven Yu; Tam Pandhumsoporn
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Paper Abstract

This presentation reviews aspects relevant to anisotropic very deep plasma etching of silicon. Plasma etching of silicon to depths in excess of 500 (mu) at rates above 4 (mu) /min. allow for new self-releasing or unidirectional flexure structures. It will begin by covering a brief comparison of anisotropic plasma etching with some other alternative very deep etching processes. The impact of Alcatel's product offering ain attaining this etch technology is also reviewed, as well as some of the interdependencies in the etch process. Then the different anisotropic etch regimes will be discussed along with the characteristics and sample applications in each regime.

Paper Details

Date Published: 19 September 1995
PDF: 5 pages
Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); doi: 10.1117/12.221296
Show Author Affiliations
David R. Craven, Alcatel Comptech Inc. (United States)
Keven Yu, Alcatel Comptech Inc. (United States)
Tam Pandhumsoporn, Alcatel Comptech Inc. (United States)

Published in SPIE Proceedings Vol. 2639:
Micromachining and Microfabrication Process Technology
Karen W. Markus, Editor(s)

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