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Proceedings Paper

Dynamic model of pulsed laser generators based on multi-junction N-p-N-i-P heterostructures
Author(s): Sergey Slipchenko; Alexsandr Podoskin; Olga Soboleva; Nikita Pikhtin; Il'ya Tarasov; Valentin Yuferev
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Paper Abstract

This communication presents a dynamic model of a multi-junction heterostructure that combines the functions of a fast current switch and a high-efficiency laser emitter. Approaches to designing a multi-junction heterostructure with faster switching (rise and decay times of about 1 ns) and higher peak current (>10 A) are considered. It is shown that an important role is played in the dynamics of the injection drive currents of the laser part by the modulation by excess carriers in the lightly doped base and collector regions of the N-p-N transistor part. As a result, a field domain is formed, which serves as a virtual emitter of electrons and holes via impact ionization.

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420I (4 March 2016); doi: 10.1117/12.2212583
Show Author Affiliations
Sergey Slipchenko, Ioffe Institute (Russian Federation)
Alexsandr Podoskin, Ioffe Institute (Russian Federation)
Olga Soboleva, Ioffe Institute (Russian Federation)
Nikita Pikhtin, Ioffe Institute (Russian Federation)
Il'ya Tarasov, Ioffe Institute (Russian Federation)
Valentin Yuferev, Ioffe Institute (Russian Federation)

Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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