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Proceedings Paper

High performance Ge-on-Si avalanche photodetector
Author(s): Ki-Seok Jang; Sanghoon Kim; In Gyoo Kim; Jin Hyuk Oh; Sun Ae Kim; Jiho Joo; Gyungock Kim
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Paper Abstract

We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatible process. The fabricated devices show a -3dB bandwidth greater than 13 GHz at operational biases (gain> 20) for λ ~ 1550 nm. The measured maximum gain-bandwidth (GB) product is ~ 493 GHz. Two types of Ge-on-Si APD receiver modules exhibit high sensitivities of better than –20.7 dBm for a 25 Gb/s operation at a BER = 10-12 and λ ~ 1310 nm, and –27.75 dBm for a 10 Gb/s operation at a BER = 10-12 and λ ~ 1550nm, respectively.

Paper Details

Date Published: 15 March 2016
PDF: 6 pages
Proc. SPIE 9753, Optical Interconnects XVI, 97531C (15 March 2016); doi: 10.1117/12.2212510
Show Author Affiliations
Ki-Seok Jang, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanghoon Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
In Gyoo Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jin Hyuk Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sun Ae Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jiho Joo, Electronics and Telecommunications Research Institute (Korea, Republic of)
Gyungock Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 9753:
Optical Interconnects XVI
Henning Schröder; Ray T. Chen, Editor(s)

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