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Proceedings Paper

SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI
Author(s): Ruijun Wang; Muhammad Muneeb; Stephan Sprengel; Gerhard Boehm; Roel Baets; Markus-Christian Amann; Gunther Roelkens
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Paper Abstract

The short-wave infrared wavelength range (2-3 μm) is attractive for applications in gas sensing and next-generation communication systems. Photodetectors and wavelength (de)multiplexers are key components that have to be developed for these systems. In this contribution, we report the integration of InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers on the silicon photonics platform. In this photodetector epitaxial layer stack, the absorbing active region consists of 6 periods of W-shaped quantum wells, which can also be used to realize lasers. The efficient coupling between silicon waveguides and quantum well photodetectors is realized by tapered III-V waveguides. The photodetectors have a very low dark current of 12 nA at -0.5 V bias at room temperature. The devices show a responsivity of 1.2 A/W at 2.32 μm wavelength, and higher than 0.5A/W over the 2.2-2.4 μm wavelength range. On the silicon-on-insulator platform we also demonstrate high performance short-wave infrared spectrometers. 8-channel spectrometers in the 2.3-2.4 μm range with a resolution of 5nm and 1.4nm are demonstrated, showing a cross-talk below -25 dB and an insertion loss lower than 3 dB.

Paper Details

Date Published: 14 March 2016
PDF: 8 pages
Proc. SPIE 9752, Silicon Photonics XI, 975209 (14 March 2016); doi: 10.1117/12.2211802
Show Author Affiliations
Ruijun Wang, Univ. Gent (Belgium)
Muhammad Muneeb, Univ. Gent (Belgium)
Stephan Sprengel, Technische Univ. München (Germany)
Gerhard Boehm, Technische Univ. München (Germany)
Roel Baets, Univ. Gent (Belgium)
Markus-Christian Amann, Technische Univ. München (Germany)
Gunther Roelkens, Univ. Gent (Belgium)

Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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