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Proceedings Paper

In-line LOCOS active width characterization using surface SEM
Author(s): Sudhir K. Madan; Tom Holloway
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Paper Abstract

A simple and nondestructive low energy electron beam surface SEM is used in-line to measure the active width with LOCOS isolation. The method resulted in photos with excellent contrast between the silicon and oxide. Also a good correlation between the surface SEM data and electrical measurements is obtained in the submicron region where the active width reduction is a strong function of the LOCOS nitride width. The method can be used to significantly reduce the technology development time by accurately measuring the active width in-line.

Paper Details

Date Published: 15 September 1995
PDF: 8 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221135
Show Author Affiliations
Sudhir K. Madan, Texas Instruments Inc. (United States)
Tom Holloway, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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