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Proceedings Paper

Improved hot-carrier reliability of MOSFET analog performance with NO-Nitrided SiO2 gate dielectrics
Author(s): L. K. Han; Dim-Lee Kwong
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Paper Abstract

This paper studies the hot-carrier immunity on the MOSFET analog performance with NO-nitrided SiO2 gate dielectrics. Degradation due to hot-carrier stress was investigated in terms of several key analog parameters, including drain output resistance (Ro), voltage swing (Vswing), voltage gain (Gm(DOT)Ro), and differential offset voltage (Voffset). Results indicate that, as compared to conventional SiO2, NO-nitrided SiO2 significantly suppresses the hot-carrier degradation in analog device performance for both n- and p- MOSFETs. It is concluded that NO nitridation, which improves interface endurance and electron trapping characteristics of SiO2 gate oxides, is a promising technique for analog CMOS applications.

Paper Details

Date Published: 15 September 1995
PDF: 8 pages
Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221132
Show Author Affiliations
L. K. Han, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 2636:
Microelectronic Device and Multilevel Interconnection Technology
Ih-Chin Chen; Girish A. Dixit; Trung Tri Doan; Nobuo Sasaki, Editor(s)

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