Share Email Print

Proceedings Paper

Influence of vacancies on GaN/AlN interface characteristics
Author(s): Yahor V. Lebiadok; Tatyana V. Bezyazychnaya; Dzmitri M. Kabanau; Gennadii I. Ryabtsev; Konstantin S. Zhuravlev
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The results of the influence of point defects (vacancy with interstitial atom) on the GaN/AlN heterointerface is presented. It was ascertained that presence of Al atom vacancy in the heterointerface leads to the contacting layer atoms rearrangement. The presence of N atom vacancy does not influence on the contacting Ga and Al layers intermixing.

Paper Details

Date Published: 26 February 2016
PDF: 6 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480W (26 February 2016); doi: 10.1117/12.2211195
Show Author Affiliations
Yahor V. Lebiadok, SSPA Optics, Optoelectronics & Laser Technology (Belarus)
Tatyana V. Bezyazychnaya, Institute of Physical Organic Chemistry (Belarus)
Dzmitri M. Kabanau, SSPA Optics, Optoelectronics & Laser Technology (Belarus)
Gennadii I. Ryabtsev, B.I. Stepanov Institute of Physics (Belarus)
Konstantin S. Zhuravlev, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)

Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?