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Proceedings Paper

Analysis of depletion silicon phase shifter based on computer simulation
Author(s): Ching Eng Png; Min Jie Sun; Soon Thor Lim; Kensuke Ogawa
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Paper Abstract

In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping concentrations in this range. The study suggested that with reduced p dopant concentration (2×1017 cm-3), both loss and phase performance will improve by 32% and 20% respectively when p region > n region, compared to central junction.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9752, Silicon Photonics XI, 975204 (14 March 2016); doi: 10.1117/12.2210895
Show Author Affiliations
Ching Eng Png, A*STAR Institute of High Performance Computing (Singapore)
Optic2Connect Pte. Ltd. (Singapore)
Min Jie Sun, Optic2Connect Pte. Ltd. (Singapore)
Soon Thor Lim, A*STAR Institute of High Performance Computing (Singapore)
Kensuke Ogawa, Fujikura Ltd. (Japan)


Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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