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Proceedings Paper

Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection
Author(s): Iman Sabri Alirezaei; Edmund P. Burte
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Paper Abstract

This paper presents a design and simulation of a novel high performance 3D-silicon photodetector for implementing in the low intensity light detection at room temperature (300K). The photodetector is modeled by inspiration of general MEMS fabrication to make a 3D- structure in the silicon substrate using a bulk micromachining process, and based on a complementary metal-oxide semiconductor (CMOS) technology. The design includes a vertical n+/p junction as an optical window for lateral illumination. The simulation is carried out using COMSOL Multiphysics relying on theoretical and physical concepts, and then, the assessment of the results is done by the numerical analysis with SILVACO (Atlas) device simulator. Light is regarded as a monochromatic beam with a wavelength of 633nm that is placed 1μm far from the optical window. The simulation is considered under the reverse bias dc voltage in the steadystate. We present photocurrent-voltage (Iph-V) characteristics under different light intensities (2… 10[mW/cm2]), and dark current-voltage (Id-V) characteristics. Comparative studies of sensitivity dependence on the dopant concentration in the substrate as an intrinsic region are accomplished utilizing two different p-type silicon substrates with 1×1015 [1/cm3] and 4×1012 [1/cm3] doping concentration. Moreover, the sensitivity is evaluated with respect to the active substrate thickness. The simulated results confirmed that the high optical sensitivity of the photodetector with low dark current can be realized in this model.

Paper Details

Date Published: 4 March 2016
PDF: 10 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974208 (4 March 2016); doi: 10.1117/12.2209042
Show Author Affiliations
Iman Sabri Alirezaei, Otto-von-Guericke Univ. Magdeburg (Germany)
Edmund P. Burte, Otto-von-Guericke Univ. Magdeburg (Germany)

Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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