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Proceedings Paper

Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells
Author(s): Yongkun Sin; Mark Peterson; Zachary Lingley; Stephen LaLumondiere; Steven C. Moss; Honghyuk Kim; Kamran Forghani; Yingxin Guan; Kangho Kim; Jaejin Lee; Luke J. Mawst; Thomas F. Kuech; Rao Tatavarti
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Paper Abstract

III-V multi-junction solar cells are based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs either a 1eV material grown on the GaAs substrate or InGaAs grown on the Ge substrate. The most promising 1 eV materials under extensive investigation are the bulk dilute nitride such as InGaAsN(Sb) lattice-matched to GaAs substrate and the dilute-bismide quantum well materials, such as GaAsBi, strain-compensated with GaAsP barriers. Both approaches have the potential to achieve high performance triple-junction solar cells. In addition, space satellite applications utilizing III-V triple-junction solar cells can have significantly reduced weight and high efficiency. An attractive approach to achieve these goals is to employ full-wafer epitaxial lift off (ELO) technology, which can eliminate the substrate weight and also enable multiple substrate re-usages. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute bismide double heterostructures (DH). Carrier lifetime measurements are crucial to optimizing MOVPE materials growth. We have studied carrier dynamics in GaAsBi QW structures with GaAsP barriers. Carrier lifetimes were measured from GaAsBi DH samples at different stages of post-growth thermal annealing steps. Post-growth annealing yielded significant improvements in carrier lifetimes. Based on this study, single junction solar cells (SJSC) were grown and annealed under a variety of conditions and characterized. The SJSC annealed at 600 – 650 °C exhibited improved response in EQE spectra. In addition, we studied carrier dynamics in MOVPE-grown GaAs-In(Al)GaP DH samples grown on GaAs substrates. The structures were grown on top of a thin AlAs release layer, which allowed epitaxial layers grown on top of the AlAs layer to be removed from the substrate. The GaAs active layers had various doping densities and thicknesses. Our TR-PL results from both pre- and post-ELO processed GaAs-In(Al)GaP DH samples are reported.

Paper Details

Date Published: 14 March 2016
PDF: 12 pages
Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, 974313 (14 March 2016); doi: 10.1117/12.2208804
Show Author Affiliations
Yongkun Sin, The Aerospace Corp. (United States)
Mark Peterson, The Aerospace Corp. (United States)
Zachary Lingley, The Aerospace Corp. (United States)
Stephen LaLumondiere, The Aerospace Corp. (United States)
Steven C. Moss, The Aerospace Corp. (United States)
Honghyuk Kim, Univ. of Wisconsin-Madison (United States)
Kamran Forghani, Univ. of Wisconsin-Madison (United States)
Yingxin Guan, Univ. of Wisconsin-Madison (United States)
Kangho Kim, Ajou Univ. (Korea, Republic of)
Jaejin Lee, Ajou Univ. (Korea, Republic of)
Luke J. Mawst, Univ. of Wisconsin-Madison (United States)
Thomas F. Kuech, Univ. of Wisconsin-Madison (United States)
Rao Tatavarti, MicroLink Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 9743:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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