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Proceedings Paper

Approaches to highly efficient UV emitters based on AlGaN quantum wells
Author(s): Shuhei Ichikawa; Mitsuru Funato; Yoichi Kawakami
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Paper Abstract

Various semipolar AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces are fabricated on AlN bulk substrates. While keeping the crystal qualities, we can easily adjust the Al compositions in the semipolar AlGaN QWs by changing growth temperatures, similar to the case of conventional (0001) AlGaN QWs. Due to the small internal electric fields in the semipolar QWs, the energy fluctuations are extremely suppressed and the radiative recombination lifetimes are drastically shortened, compared with the (0001) QWs. The shorter radiative recombination lifetimes realize much stronger emissions from the semipolar QWs.

Paper Details

Date Published: 26 February 2016
PDF: 6 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480U (26 February 2016); doi: 10.1117/12.2208779
Show Author Affiliations
Shuhei Ichikawa, Kyoto Univ. (Japan)
Mitsuru Funato, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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