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Proceedings Paper

Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping
Author(s): Hong Yin
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Paper Abstract

This paper firstly introduces c-BN in general and its excellent properties that make c-BN a promising candidate competing with diamond as hard coating and as a future high temperature semiconductor material. Furthermore, this paper gives an overview of the recent advances of the different synthetic techniques towards the heteroepitaxial growth of c-BN films. In the end, it will describe the state of the art of n-type doping of these c-BN epitaxial films through which a c-BN/diamond pn diode can be anticipated.

Paper Details

Date Published: 26 February 2016
PDF: 12 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974805 (26 February 2016); doi: 10.1117/12.2208392
Show Author Affiliations
Hong Yin, Jilin Univ. (China)

Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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