Share Email Print

Proceedings Paper

DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power
Author(s): André Müller; Jörg Fricke; Frank Bugge; Olaf Brox; Götz Erbert; Bernd Sumpf
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured by electron beam lithography. At a heatsink temperature of 15°C an optical output power of 12.7 W with an electro-optical efficiency > 40% is obtained. The corresponding emission wavelength is 1030.57 nm and spectral bandwidths of 0.02 nm are measured over the whole power range. At 10.5 W of optical power 8.1 W are contained in the central lobe. The measured beam propagation ratio and brightness are 1.1 (1/e2) and 700 MWcm-2 sr-1, respectively. With these parameters, the laser is suitable for applications such as non-linear frequency conversion.

Paper Details

Date Published: 7 March 2016
PDF: 8 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671I (7 March 2016); doi: 10.1117/12.2207454
Show Author Affiliations
André Müller, Ferdinand-Braun-Institut (Germany)
Jörg Fricke, Ferdinand-Braun-Institut (Germany)
Frank Bugge, Ferdinand-Braun-Institut (Germany)
Olaf Brox, Ferdinand-Braun-Institut (Germany)
Götz Erbert, Ferdinand-Braun-Institut (Germany)
Bernd Sumpf, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?