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Proceedings Paper

4H-SiC photodiode model for DC SPICE circuit simulation
Author(s): Andrzej Kociubiński; Mariusz Duk; Mateusz Korona; Krzysztof Muzyka
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Paper Abstract

Technology, characterization and in particularly modeling of 4H-SiC photodiode have been presented in this paper. Modeling and simulation has been performed using PSPICE environment. Comparison of simulation with real results for electrical characteristic (I-V) of circular SiC photodiodes has been also presented.

Paper Details

Date Published: 11 September 2015
PDF: 7 pages
Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96620V (11 September 2015); doi: 10.1117/12.2205737
Show Author Affiliations
Andrzej Kociubiński, Lublin Univ. of Technology (Poland)
Mariusz Duk, Lublin Univ. of Technology (Poland)
Mateusz Korona, Lublin Univ. of Technology (Poland)
Krzysztof Muzyka, Lublin Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 9662:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015
Ryszard S. Romaniuk, Editor(s)

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