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Proceedings Paper

Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications
Author(s): Jiabing Lv; Jun Chen; Min Zhu
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Paper Abstract

In this letter, we analyzed an analytical spectral response(SR) model for a near-infrared(NIR) heterojuction phototransistor (HPT) with the purpose of understanding the behavior of lattice-matched In0.53Ga0.47As/InP HPT achieving the current gain with changing device and material parameters. The responsivity of the model we designed leads to a good agreement between theoretical and experimental results for the incident wavelength radiations at 980, 1310, and 1550nm, the responsivity is developed from the solution of continuity equations that dominate the excess optically generated minority-carriers in the active layers of the HPT with boundary conditions.

Paper Details

Date Published: 15 October 2015
PDF: 6 pages
Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742E (15 October 2015); doi: 10.1117/12.2201033
Show Author Affiliations
Jiabing Lv, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)
Min Zhu, Soochow Univ. (China)

Published in SPIE Proceedings Vol. 9674:
AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology
Haimei Gong; Nanjian Wu; Yang Ni; Weibiao Chen; Jin Lu, Editor(s)

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