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Proceedings Paper

ENDEAVOUR to understand EUV buried defect printability
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Paper Abstract

NAP-PD (Native Acting Phase – Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibility are analyzed with conventional phase contrast blank inspection @193 nm wavelength, pattern inspection @193 nm wavelength and SEM. The mask is also printed on wafer and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank and pattern inspection sensitivity is not enough to detect all of the printable defects.

Paper Details

Date Published: 9 July 2015
PDF: 9 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580G (9 July 2015); doi: 10.1117/12.2197763
Show Author Affiliations
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Takeshi Isogawa, Toppan Photomasks, Inc. (United States)
Masayuki Kagawa, Toppan Photomasks, Inc. (United States)
Shinji Akima, Toppan Photomasks, Inc. (United States)
Yutaka Kodera, Toppan Printing Co., Ltd. (Japan)
Karen Badger, IBM Mircoelectronics (United States)
Zhengqing John Qi, IBM Mircoelectronics (United States)
Mark Lawliss, IBM Mircoelectronics (United States)
Jed Rankin, IBM Mircoelectronics (United States)
Ravi Bonam, IBM Mircoelectronics (United States)

Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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