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Proceedings Paper

Growth dependent optical properties of ZnMgO at THz frequencies
Author(s): Abdiel Rivera; Anas Mazady; Kiarash Ahi; Mehdi Anwar
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Paper Abstract

A relatively high Mg mole fraction of 7% is achieved using the cavitation effect under sonication to overcome the low solubility of ZnO-MgO at low temperature. The Mg mole fraction is confirmed by shift in the near band emission of free exciton under photoluminescence spectroscopy at room temperature. The x-ray diffraction pattern has a large peak associated to ZnO (002) from which the c-lattice constant is calculated to be 5.1967Ǻ. The nanorods (NRs) grown via sonochemical are compared to nanowires (NWs) grown using metal organic chemical vapor deposition (MOCVD) and hydrothermal synthesis. Also, the effect of the ZnO film used as seed layer is described and compare to a simple spin coated layer. Terahertz (THz) index of refraction and dielectric constant of wurtzite Zn1-xMgxO NWs with Mg mole fraction of 7% via sonochemical are determined using THz time domain spectroscopy (THz-TDS). The results are compared with ZnO and ZnMgO NWs with 10% Mg mole fraction grown using MOCVD. The successful growth of Zn1-xMgxO with wurtzite structure at low temperature permits realization of the growth of heterostructures, quantum well, nanowires and nanorods on flexible substrates providing lower cost, optical and carrier confinement necessary in advanced light emitting diodes (LEDs), laser diodes (LDs) and high efficiency solar cells.

Paper Details

Date Published: 13 May 2015
PDF: 7 pages
Proc. SPIE 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense, 94830X (13 May 2015); doi: 10.1117/12.2182838
Show Author Affiliations
Abdiel Rivera, Univ. of Connecticut (United States)
Anas Mazady, Univ. of Connecticut (United States)
Kiarash Ahi, Univ. of Connecticut (United States)
Mehdi Anwar, Univ. of Connecticut (United States)

Published in SPIE Proceedings Vol. 9483:
Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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