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Proceedings Paper

Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation
Author(s): Frederic Rothan; Isabelle Bischoff; Gilles Chammings; Michel Ravetto; Michel Vilain; Philippe Galdemard; Rene Jouan; Pierre-Olivier Lagage; Pierre Masse
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Paper Abstract

New gallium-doped silicon 128 by 192 element arrays have been achieved at CEA-LETI-LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometer spectral range. This program is in keeping with the previous detector development for the ISOCAM camera (32 by 32 element arrays) and for ground-based observation (64 by 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometer which leads to 10 by 15 mm2 chip dimensions, two selectable storage capacitors (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometer design rules. The main electro- optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fA rms over the 0.1 - 128 Hz spectral range which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10-14 W.

Paper Details

Date Published: 8 September 1995
PDF: 6 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218279
Show Author Affiliations
Frederic Rothan, LETI-CEA (France)
Isabelle Bischoff, LETI-CEA (France)
Gilles Chammings, LETI-CEA (France)
Michel Ravetto, LETI-CEA (France)
Michel Vilain, LETI-CEA (France)
Philippe Galdemard, CEA-DSM-DAPNIA (France)
Rene Jouan, CEA-DSM-DAPNIA (France)
Pierre-Olivier Lagage, CEA-DSM-DAPNIA (France)
Pierre Masse, CEA-DSM-DAPNIA (France)

Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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