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Proceedings Paper

256 x 256 3- to 5-um focal plane array at 77 K operation
Author(s): Dominique Marion; Jacques Cluzel; Francois Mongellaz; Philippe Rambaud; Michel Ravetto
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Paper Abstract

A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors, made on liquid phase epitaxy (LPE) layers, are interconnected by indium bumps on the readout circuit. A description of the readout circuit is given and the main electro-optical characteristics of the component are presented. The detector arrays exhibit a quantum efficiency of 60% with a non-uniformity of less than 4%. The pixel operability is greater than 99.5 %. In spite of the non-optimized threshold voltage of the technology, the charge handling capacity reaches 20.106 e- for the 35 micrometer pitch. This allows an NEDT of 12 mK at the output midpoint. Excellent imagery has been obtained with this component operating at 77 K using f/2 optics. The imagery has high contrast with no significant fixed pattern noise.

Paper Details

Date Published: 8 September 1995
PDF: 7 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218277
Show Author Affiliations
Dominique Marion, LETI-CEA (France)
Jacques Cluzel, LETI-CEA (France)
Francois Mongellaz, LETI-CEA (France)
Philippe Rambaud, LETI-CEA (France)
Michel Ravetto, LETI-CEA (France)

Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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