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Proceedings Paper

Noninvasive thermal imaging of GaAs MESFETs
Author(s): M. de Boer; Hans Winkel; J. Verduyn; Frank L. M. van den Bogaart; Jan S. de Vries
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Paper Abstract

We demonstrate the use of an infrared focal plane array (IR-FPA) to measure the spatially resolved surface temperature of a GaAs MESFET (gallium arsenide metal-semiconductor field-effect transistor) under dc and rf operating conditions. By compensating for variations of the small emissivity, absolute temperatures of plus or minus 5 degrees Celsius, and small temperature differences of 1 degree Celsius can be determined. By deconvolution of the lens MTF (modulation transfer function) we attain a resolution of 6.25 micrometer. The combination of thermal and spatial sensitivity makes our set-up ideally suited for non- destructive characterization of semiconductor devices.

Paper Details

Date Published: 8 September 1995
PDF: 11 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218270
Show Author Affiliations
M. de Boer, TNO Physics and Electronics Lab. (Netherlands)
Hans Winkel, TNO Physics and Electronics Lab. (Netherlands)
J. Verduyn, TNO Physics and Electronics Lab. (Netherlands)
Frank L. M. van den Bogaart, TNO Physics and Electronics Lab. (Netherlands)
Jan S. de Vries, TNO Physics and Electronics Lab. (Netherlands)


Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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