Proceedings Paper
Electro-optical characterization of epitaxial and polycrystalline CoSi2 Schottky diodes| Format | Member Price | Non-Member Price |
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Paper Abstract
The infrared response of polycrystalline and epitaxial CoSi2/Si Schottky diodes with similar silicide thickness has been measured. For the polycrystalline diodes the quantum efficiency is found to be two times higher than for the epitaxial diodes, although both types of diodes present very similar barrier height. The observed improvement is attributed to grain boundary scattering of the excited carriers.
Paper Details
Date Published: 8 September 1995
PDF: 6 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218245
Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)
PDF: 6 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218245
Show Author Affiliations
Sabine Kolodinski, IMEC (Belgium)
Robert P. Mertens, IMEC (Belgium)
Robert P. Mertens, IMEC (Belgium)
Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)
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