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Proceedings Paper

256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band
Author(s): Toshio Kanno; Hideo Wada; Mitsuhiro Nagashima; Hiroyuki Wakayama; Kenji Awamoto; Nobuyuki Kajihara; Yuichiro Ito; M. Nakamura
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Paper Abstract

We developed a 256 by 256 element HgCdTe hybrid infrared focal plane array (IRFPA) for the 8 to 10 micrometer band. We used three technologies to develop this high-performance, long-wavelength, large-scale IRFPA. The first innovation was to glue a sapphire substrate to a thinned Si readout circuit to reduce the thermal expansion mismatch with a HgCdTe diode array fabricated on a CdZnTe substrate. The second was to fabricate an interlaced switched- FET readout circuit using a 3 micrometer CMOS process. This readout circuit has a storage capacity of more than 107 electrons and two video outputs capable of a 3.5 MHz data rate. The third was a HgCdTe diode array with an anodic sulfide passivation film and an optimized cutoff wavelength to reduce dark current and achieve high sensitivity. The noise equivalent temperature difference (NETD) was 0.06 K using f/2.5 optics. After 1000 thermal cycles (300 K - 80 K), there were no significant indium bump failures nor notable degradation in detector performance.

Paper Details

Date Published: 8 September 1995
PDF: 8 pages
Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218237
Show Author Affiliations
Toshio Kanno, Japan Defense Agency (Japan)
Hideo Wada, Japan Defense Agency (Japan)
Mitsuhiro Nagashima, Japan Defense Agency (Japan)
Hiroyuki Wakayama, Fujitsu Labs. Ltd. (Japan)
Kenji Awamoto, Fujitsu Labs. Ltd. (Japan)
Nobuyuki Kajihara, Fujitsu Labs. Ltd. (Japan)
Yuichiro Ito, Fujitsu Labs. Ltd. (Japan)
M. Nakamura, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 2552:
Infrared Technology XXI
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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