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Proceedings Paper

InAs-GaSb-AlSb quantum confined structures for IR applications
Author(s): Craig A. Hoffman; Jerry R. Meyer; Filbert J. Bartoli; James R. Waterman; Benjamin V. Shanabrook; Brian Robert Bennett; R. J. Wagner
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Paper Abstract

We review recent progress in the development of quantum confined structures based on the InAs-GaSb-AlSb family of semiconductors. The results of transport and quantum transport experiments are summarized to illuminate band structure features and carrier scattering mechanisms that are key to device applications. The unique band structure engineering possibilities enabled by the presence of L-valleys in the conduction band are explored, as well as, the general progress in band structure calculations and modeling of complex multi-layers. A primary emphasis is the flexibility of the InAs-GaSb-AlSb material system as the basis for a wide variety of E-O modulators, frequency doublers, infrared diode lasers, and other devices.

Paper Details

Date Published: 1 September 1995
PDF: 13 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218180
Show Author Affiliations
Craig A. Hoffman, Naval Research Lab. (United States)
Jerry R. Meyer, Naval Research Lab. (United States)
Filbert J. Bartoli, Naval Research Lab. (United States)
James R. Waterman, Naval Research Lab. (United States)
Benjamin V. Shanabrook, Naval Research Lab. (United States)
Brian Robert Bennett, Naval Research Lab. (United States)
R. J. Wagner, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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