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Proceedings Paper

Evaluation of HgCdTe using laser beam induced current
Author(s): Kenji Arinaga; Kazuo Ozaki; Gen Sudo; Nobuyuki Kajihara
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Paper Abstract

We have developed a nondestructive evaluation method for HgCdTe. We focused on laser beam induced current (LBIC) which features a high specific resolution and nondestructive evaluation. The LBIC technique shows the electrically active regions in HgCdTe wafer as an image. We have considered the measurement temperature versus the LBIC signal. The LBIC technique at room temperature (300 K) can be used to evaluate non-uniformities in carrier concentrations in HgCdTe more sensitively. Using etch pit studies and secondary ion mass spectroscopy (SIMS), we have identified that non-uniformities of carrier concentration in the HgCdTe wafer arise from metal impurities around dislocation clusters. This nondestructive technique is useful for screening HgCdTe wafers before fabricating devices.

Paper Details

Date Published: 1 September 1995
PDF: 8 pages
Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218178
Show Author Affiliations
Kenji Arinaga, Fujitsu Labs. Ltd. (Japan)
Kazuo Ozaki, Fujitsu Labs. Ltd. (Japan)
Gen Sudo, Fujitsu Labs. Ltd. (Japan)
Nobuyuki Kajihara, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 2554:
Growth and Characterization of Materials for Infrared Detectors II
Randolph E. Longshore; Jan W. Baars; Avishai Kepten; John M. Trombetta, Editor(s)

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