In present analysis a semiconductor-based surface plasmon resonance structure using Gr-IV materials (Silicon and Germanium) has been analyzed in spectral interrogation mode which can be used for efficient environmental monitoring and Infrared (IR) gas-sensing purposes. The Silicon-Germanium (Si-Ge) combination structure is able to confine an extremely high evanescent field in the sensing region due to their extraordinary high refractive indices (RI). Higher concentration of optical field in the sensing area provides enhanced spectral sensitivity for infrared gas-sensing. Better detection accuracy and adequate dynamic range are other additional advantages offered by such semiconductor-based surface plasmon resonance (SPR) configurations. Analysis of the SPR structure has also been carried out in terms of detection accuracy, figure of merit and Q-factor of the gas-sensor.

Date Published: 15 June 2015
PDF: 4 pages
Proc. SPIE 9654, International Conference on Optics and Photonics 2015, 965410 (15 June 2015); doi: 10.1117/12.2181423

Published in SPIE Proceedings Vol. 9654:
International Conference on Optics and Photonics 2015
Kallol Bhattacharya, Editor(s)