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Proceedings Paper

Laser-induced damage of GaAs/Ge solar cells by 532nm laser
Author(s): Rongzhen Zhu; Rui Wang; Xiangai Cheng
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Paper Abstract

Single-heterogeneous junction GaAs/Ge solar cells induced by 532nm laser with the pulse width of 12ns are investigated. Results indicate that the GaAs/Ge solar cells would mostly be damaged when laser is focused on its grid lines. Its surface damage morphology initially occurs at 0.35J/cm2 by the single laser pulse with nanosecond duration. Theoretically, the nanosecond laser pulse leaded damage mainly comes from both the thermal and the mechanical effects. These experimental conclusions are tested and verified by scanning electron microscope with energy dispersive spectroscopy and X-ray photoelectron spectroscopy.

Paper Details

Date Published: 4 May 2015
PDF: 8 pages
Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 95430I (4 May 2015); doi: 10.1117/12.2181158
Show Author Affiliations
Rongzhen Zhu, National Univ. of Defense Technology (China)
Rui Wang, National Univ. of Defense Technology (China)
Xiangai Cheng, National Univ. of Defense Technology (China)

Published in SPIE Proceedings Vol. 9543:
Third International Symposium on Laser Interaction with Matter
Yury M. Andreev; Zunqi Lin III; Xiaowu Ni; Xisheng Ye, Editor(s)

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