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Proceedings Paper

13nm EUV free electron lasers for next generation photolithography: the critical importance of RF stability
Author(s): Simon Keens; Bodo Fritsche; Carmen Hiltbrunner; Marcel Frei
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Paper Abstract

A Free Electron Laser (FEL) is a highly coherent, highly collimated light source capable of creating extremely high power beams of precisely controlled wavelengths. The semiconductor industry is currently examining these as sources extreme ultraviolet (EUV) light for photolithography applications. An important factor to achieve high quality FEL emission is the careful development of the amplifying RF system as a complete integrated unit, considering each component as part of the amplification chain to maximise RF stability and FEL beam quality. In this paper we review methods to optimise RF amplifier systems without compromising on output stability, compare solid-state with tube based technologies, and discuss the state-of-the-art in RF amplifier technology, highlighting recent case studies. We conclude by examining the benefits of integrated systems and highlight the solutions offered by available technologies to a range of technological challenges, in order to design and build the best possible systems with maximum possible efficiency for the demanding requirements of the semiconductor industry.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222Q (13 March 2015); doi: 10.1117/12.2181069
Show Author Affiliations
Simon Keens, Ampegon AG (Switzerland)
Bodo Fritsche, Ampegon AG (Switzerland)
Carmen Hiltbrunner, Ampegon AG (Switzerland)
Marcel Frei, Ampegon AG (Switzerland)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

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