Research methodology for measuring the natural frequency of the inner and outer frames of micromechanical oscillating system with an electrostatic actuator in filling spaces inside corps with nitrogen, and verification methodology of a micromechanical sensor element (SE) on the basis of rotation angle measurement has been developed. Developed new technical solution was consisted in that for correcting errors in the form of etched shapes compensator topology with special configuration has been used. It was possible to obtain the moving parts of MEMS with etched rectangular shape figures and with a large etching depth about 400 microns. Hydrogenated silicon surface layers were investigated by IR - spectroscopy. It was shown that substrate temperature plays a primary role in the formation of hydrogen-defect layer in silicon. The behavior of the low-frequency band in the region of stretching vibrations of Si-H during annealing has been analyzed. The dependence character of the resonance frequency of the movable (SE) part of MEMS torsion type vs temperature has been investigated. It was found that when the temperature changes from 25 to 80 °C, so natural SE frequency does not change more than 1%. The dependence of the quality factor and the natural frequency of the moving SE part from the inside corps pressure on the various modes of oscillation was investigated.

Date Published: 21 May 2015
PDF: 7 pages
Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95171Z (21 May 2015); doi: 10.1117/12.2180923

Published in SPIE Proceedings Vol. 9517:
Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems
José Luis Sánchez-Rojas; Riccardo Brama, Editor(s)