Proceedings Paper
TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers| Format | Member Price | Non-Member Price |
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Paper Abstract
A study of copper (Cu) diffusion into silicon substrates through TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated based on an experimental approach. TaNx and Ta/graded Ta(N)/TaN thin films were deposited by magnetron sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N2 partial pressure on the microstructure and the electrical properties is reported. The efficiency of TaNx layers and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 300 and 600◦C in Ar.
Paper Details
Date Published: 18 December 2014
PDF: 9 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944009 (18 December 2014); doi: 10.1117/12.2180901
Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)
PDF: 9 pages
Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944009 (18 December 2014); doi: 10.1117/12.2180901
Show Author Affiliations
I. Khorin, Institute of Physics and Technology (Russian Federation)
Moscow State Technical Univ. (Russian Federation)
A. Rogozhin, Institute of Physics and Technology (Russian Federation)
Moscow State Technical Univ. (Russian Federation)
A. Rogozhin, Institute of Physics and Technology (Russian Federation)
N. Orlikovsky, Institute of Physics and Technology (Russian Federation)
V. Kalnov, Institute of Physics and Technology (Russian Federation)
V. Kalnov, Institute of Physics and Technology (Russian Federation)
Published in SPIE Proceedings Vol. 9440:
International Conference on Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky, Editor(s)
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