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Proceedings Paper

Modeling for infrared readout integrated circuit based on Verilog-A
Author(s): Xiao Wang; Zelin Shi
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Paper Abstract

Infrared detectors are the core of infrared imaging systems, while readout integrated circuits are the key components of detectors. In order to grasp the performance of circuits quickly and accurately, a method of circuit modeling using Verilog-A language is proposed, which present a behavioral simulation model for the ROIC. At first, a typical capacitor trans-impedance amplifier(CTIA) ROIC unit is showed, then the two essential parts of it,operational amplifier and switch are modeled on behavioral level. The op amp model concludes these non-ideal factors, such as finite gain-bandwidth product, input and output offset, output resistance and so on. Non-deal factors that affect switches are considered in the switch behavioral model, such as rise and fall time, on-resistance and so on. At last time-domain modeling method for noise is presented, which is compared with the classical frequency domain method for difference. The analysis results shows that in the situation that noise interested bandwidth(NIBW) is more than 5MHz, the difference between the two methods leads to less than 1% if the sample rate of noise is larger 4 times of the NIBW

Paper Details

Date Published: 13 April 2015
PDF: 7 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95221M (13 April 2015); doi: 10.1117/12.2180101
Show Author Affiliations
Xiao Wang, Shenyang Institute of Automation (China)
Univ. of Chinese Academy of Sciences (China)
Key Lab. of Opto-Electronic Information Processing (China)
Zelin Shi, Shenyang Institute of Automation (China)
Key Lab. of Opto-Electronic Information Processing (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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